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1
Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling
Springer India
Souvik Mahapatra (eds.)
stress
nbti
δvt
devices
gate
measured
hkmg
degradation
shown
mosfets
evolution
pbti
generation
recovery
δvit
dependence
traps
bti
insulator
measurements
δnit
mahapatra
tstr
eox
chap
electron
exponent
trapping
delay
dciv
shows
reliability
device
discussed
method
measurement
bias
msm
figure
obtained
physics
pdc
temperature
δvht
symposium
impact
parameters
proceedings
activation
fixed
Year:
2016
Language:
english
File:
PDF, 20.69 MB
Your tags:
0
/
0
english, 2016
2
Bias Temperature Instability for Devices and Circuits
Springer-Verlag New York
Andreas Kerber
,
Eduard Cartier (auth.)
,
Tibor Grasser (eds.)
stress
devices
nbti
gate
device
temperature
bias
traps
voltage
defects
degradation
bti
recovery
oxide
electron
sio2
δvt
reliability
capture
shown
shift
trapping
measurement
emission
grasser
circuit
current
observed
measured
phys
density
shows
measurements
instability
dependence
induced
relaxation
τe
figure
vth
hydrogen
τc
kaczer
silicon
simulation
noise
frequency
proc
circuits
function
Year:
2014
Language:
english
File:
PDF, 26.09 MB
Your tags:
0
/
0
english, 2014
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